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Final stage of the charge-transfer process in charge-coupled devices

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3 Author(s)
Daimon, Y. ; California Institute of Technology, Pasadena, Calif. ; Mohsen, A.M. ; McGill, T.C.

The final stages of transfer of charge from under a storage gate is formulated analytically including both fringing-field induced drift and diffusion. Analytic solutions to these equations are presented for constant fringing fields, and a system of equations for spatially varying fields is developed. Approximate solutions for spatially varying fringing fields, when combined with a lumped-parameter model of the self-induced field effects, are shown to give a reasonably accurate representation of the free-charge transfer process.

Published in:

Electron Devices, IEEE Transactions on  (Volume:21 ,  Issue: 4 )

Date of Publication:

Apr 1974

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