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The development of a modeling technique for bipolar devices is described. The application of the technique results in complete and realistic large-signal models which are amenable to computer-aided analysis. SCEPTRE has been used to effectively analyze derived models, and results of SCEPTRE analyses of a developed transistor model are presented to illustrate the general capabilities of the modeling technique and to indicate the efficiency with which the resulting models are handled by SCEPTRE. The models are structured such that systematic modifications in model complexity can be effected to reflect refinements in the states of the art of device processing and analysis, as well as to efficiently satisfy the user's model capability requirements.