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Approximation to impurity atom distribution from a two-step diffusion process

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2 Author(s)
A. B. Bhattacharyya ; Indian Institute of Technology, New Delhi, India ; T. N. Basavaraj

The most commonly used diffusion process in planar technology is known as two-step diffusion, and the impurity atom profile is given by an integral. An approximation is suggested for such a profile which is simpler and accurate enough to be used in device characterization. It is seen that the built-in field resulting from two-step diffusion can be approximated as linearly varying with distance.

Published in:

IEEE Transactions on Electron Devices  (Volume:20 ,  Issue: 5 )