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GaAsP VLED's by Zn-ion implantation

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3 Author(s)

The feasibility of fabricating visible-light emitting diodes (VLED's) by ion implantation has been investigated. Zn-ions at 20-40 kev energy were implanted into Te-doped GaAs06P0.4epitaxial layers on GaAs substrates with ion doses ranging from1 times 10^{14}to1 times 10^{16}ions/cm2. Details of the diode fabrication process will be given, together with the characteristics of the finished devices, as well as resistivity, mobility, and photoluminescence data of the implanted layers as a function of the annealing and implantation parameters.

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Electron Devices Meeting, 1972 International  (Volume:18 )

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