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An accurate large-signal MOS transistor model for use in computer-aided design

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3 Author(s)
Merckel, G. ; Centre d''Etudes Nucleaires de Grenoble, Grenoble, France ; Borel, J. ; Cupcea, N.Z.

Some MOS transistor models for computer-aided design, each having a given accuracy and complexity, are presented. These models apply before saturation and in the saturation region. Before saturation, the proposed theory takes into account the behavior of mobility versus gate-channel and drain-source biases. In the saturation region the effect of mobile carriers on the drain-channel space-charge layer in an approximate two-dimensional analysis is taken into account. This model has been checked for dc characteristics I_{D} (V_{DS}) and different channel lengths, dynamic resistances in the saturation region, transfer characteristics of various inverters, and dynamic response of these circuits. The accuracy is within 5 percent.

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Electron Devices, IEEE Transactions on  (Volume:19 ,  Issue: 5 )