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GaAs planar Gunn diodes for DC-biased operation

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3 Author(s)
Takeuchi, M. ; Nippon Electric Company, Ltd., Kawasaki, Japan ; Higashisaka, A. ; Sekido, K.

The difficulty in obtaining CW oscillations in GaAs planar Gunn diodes has been found to be due to distortion of the field distribution by a field-enhanced trapping effect. A tapered active region is proposed to compensate for the effect due to the trapping. By adopting the geometry, coherent CW Gunn oscillations have been obtained successfully with reasonable reproducibility.

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Electron Devices, IEEE Transactions on  (Volume:19 ,  Issue: 1 )