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Buckling of thermally-grown SiO2thin films

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3 Author(s)

The difference in thermal expansion causes compression in SiO2thermally grown on Si wafers. Unsupported windows of SiO2buckle if the oxide thickness/window width ratio (t/w) is too small. This correspondence presents the experimentally determined t/w ratio for stable films.

Published in:

Electron Devices, IEEE Transactions on  (Volume:19 ,  Issue: 1 )

Date of Publication:

Jan 1972

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