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The VfTrelation of CW Gunn-effect devices

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2 Author(s)
Freeman, K.R. ; University of Sheffield, Sheffield, England ; Hobson, G.S.

Theoretical device simulations and experimental results are presented to show that the origin of an empirical relationship between the bias voltage and transit frequency of CW longitudinal Gunn-effect devices lies in a combination of space-charge propagation effects and thermal effects. The bias current-voltage relationship is considerably altered by the particular details of the device doping profile through average accumulation or depletion effects, as well as by the temperature.

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Electron Devices, IEEE Transactions on  (Volume:19 ,  Issue: 1 )