By Topic

Performance of refractory metal multilevel interconnection system

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Engeler, W.E. ; General Electric Research and Development Center, Schenectady, N. Y. ; Brown, D.M.

High-temperature multilevel interconnection systems are discussed from a materials fabrication, yield, and circuit performance point of view. Refractory metal interconnections are compared to diffused Si planar runs and heavily doped polycrystalline Si films. Circuit configurations and their relative importance for these material-circuit performance considerations are considered. All of the high-temperature refractory systems will have higher yield and better passivation properties than many low-temperature systems. Metallic interconnections are always best from a circuit performance point of view. The relative difference between the high-temperature systems considered depends on circuit configuration. In particular, high-temperature refractory metal (Mo, W) interconnections which are a natural by-product of the self-registered refractory metal gate MOS technology (RMOS) are superior for memory circuits where long address lines are used.

Published in:

Electron Devices, IEEE Transactions on  (Volume:19 ,  Issue: 1 )