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D-MOS transistor for microwave applications

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4 Author(s)
Sigg, H.J. ; Signetics Corporation, Sunnyvale, Calif. ; Vendelin, G.D. ; Cauge, T.P. ; Kocsis, J.

A new n-channel silicon MOS transistor is described that can be fabricated with channel lengths of less than 1 µ by using a double-diffusion process similar to that used in bipolar transistor fabrication. The dimensional tolerances are not tighter than those used in the processing of conventional MOS transistors. This device (called D-MOST) shows gain in the GHz range and a noise figure comparable to that of microwave transistors. The fmaxis 10 GHz and the noise figure is 4.0 dB at 1 GHz. A brief theory of the D-MOST is followed by the design considerations for a discrete microwave device. Results from s-parameter measurements in the range of 0.1-2.5 GHz are presented along with graphs showing the gains and the stability factor. A simple equivalent circuit is derived from the measurements. Applications of the D-MOST are described.

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Electron Devices, IEEE Transactions on  (Volume:19 ,  Issue: 1 )