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Steady-state junction temperatures of semiconductor chips

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2 Author(s)
R. D. Lindsted ; Wichita State University, Wichita, Kans. ; R. J. Surty

The temperature drop between a transistor junction and the base of a silicon chip is dependent upon the power to be dissipated as well as the geometry of the device. This problem in three-dimensional heat conduction is analytically solved for boundary conditions which approximate a set of operating conditions. Nondimensional curves and examples summarizing typical solutions have been included to illustrate problem solving techniques.

Published in:

IEEE Transactions on Electron Devices  (Volume:19 ,  Issue: 1 )