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Impact ionization in bulk GaAs high field domain

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2 Author(s)
Bohn, P.P. ; Stevens Institute of Technology, Hoboken, N. J. ; Herskowitz, G.J.

An investigation of impact ionization in the high field domains of GaAs Gunn effect devices has been carried out. A method of measuring the number of excess electrons generated per domain transit was developed, based on the measurement of the increase in the valley current from one domain transit to the next while impact ionization is occurring in the domain. This method was used to experimentally determine the carrier generation per domain transitDelta n/n_{0}as a function of excess domain potential VDfor three material carrier concentrations. These results are compared to a theoretical calculation ofDelta n/n_{0}based upon an approximate solution of the continuity equation and invariant domain calculations. The experimental and theoretical results agree to within 2 percent forn_{0} = 3 times 10^{14}cm-3and 6 percent forn_{0} = 4 times 10^{14}cm-3.

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Electron Devices, IEEE Transactions on  (Volume:19 ,  Issue: 1 )