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A self-isolation scheme for monolithic integrated circuits

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A new technique for fabricating monolithic integrated circuits with active and passive components on a silicon substrate will be presented. Conventionally, integrated circuits are made by diffusing N+impurities in a P-substrate followed by an epitaxial deposition of N-type silicon. A subsequent P+diffusion around the N+buried layer defined the P-N junction-isolated N/N+(N over N+) islands where the transistors could be formed by making P base and N+emitter diffusions.

Published in:

Electron Devices Meeting, 1971 International  (Volume:17 )

Date of Conference:

1971