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Noise in high-gain transistors and its application to the measurement of certain transistor parameters

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1 Author(s)
Hsu, S.T. ; University of Manitoba, Winnipeg, Canada

Noise performance of a high-gain transistor is presented. It is shown that both burst noise and flicker noise in high-gain transistors are not as important as those in low-gain units. At very small biases, less than 10 µA for the given transistor, the limiting noise of the transistor is dominated by the shot noise. In the higher bias region the thermal noise of the base resistance is the dominant noise of the transistor. It is also demonstrated that from noise measurement the base resistance rb'b, the transconductance gm, and the small signal common emitter-current gain β can be accurately determined.

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Electron Devices, IEEE Transactions on  (Volume:18 ,  Issue: 7 )