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MOS-Bipolar monolithic integrated circuit technology

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2 Author(s)
S. Graf ; RCA, Somerville, N.J. ; M. Polinsky

A technique is described that makes possible the fabrication of p-channel MOS transistors and bipolar transistors within monolithic integrated circuits. Total process compatibility has been achieved without compromising either the n-p-n bipolar or p-channel MOS characteristics, p-channel MOS transistors with V_{T} = 1.7 volts, gm= 1000 µmhos, and BV_{DS} = 35 volts for W/L = 60 and tox= 1000 Å have been fabricated with bipolar transistors having B = 100, f_{t} = 500 MHz and BV_{CEO} = 50 V.

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Electron Devices Meeting, 1970 International  (Volume:16 )

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