MOS-Bipolar monolithic integrated circuit technology

A technique is described that makes possible the fabrication of p-channel MOS transistors and bipolar transistors within monolithic integrated circuits. Total process compatibility has been achieved without compromising either the n-p-n bipolar or p-channel MOS characteristics, p-channel MOS transistors withV_{T} = 1.7volts, gm= 1000 µmhos, andBV_{DS} = 35volts forW/L= 60 and tox= 1000 Å have been fabricated with bipolar transistors havingB = 100, f_{t} = 500MHz andBV_{CEO} = 50V.