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A theoretical model for the generation-recombination (g-r) noise in MOS transistors is presented. This model takes into account the charge induced on all electrodes by the charge fluctuation of the impurity center in the depletion region. The model gives a finite equivalent gate noise resistance at saturation. Gold-doped and no-gold control devices were fabricated to verify the theory experimentally. The drain-voltage dependence of the g-r noise, which is shown to be distinctly different from the 1/f noise and thermal noise, is used to check the theory. Good agreement between theory and experiment is obtained.