Referenced Items are not available for this document.
A new type of thin-film strain sensor has been conceived. This sensor is a p-n heterojunction diode utilizing polycrystalline semiconductor layers obtained by vacuum evaporation onto an insulating substrate. The device exhibits large shifts in its forward I-V characteristic when subjected to a mechanical strain, and thus functions as a low output impedance voltage source.
Published in:
Electron Devices Meeting, 1968 International
(Volume:14
)
Date of Conference: 1968
- Page(s):
- 112 - 114
- Digital Object Identifier :
- 10.1109/IEDM.1968.188040
- Product Type:
- Conference Publications
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