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High-efficiency X-band GaAs IMPATT diodes

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1 Author(s)

Epitaxial GaAs diodes have been fabricated giving 651mW CW output power at 10 GHz under room temperature operation. A dc to RF efficiency of 10.1 percent was obtained from a diode operating CW while the measured output of another diode was over 20 mW for 3 mA dc with 70-volt biasing.

Published in:

IEEE Transactions on Electron Devices  (Volume:15 ,  Issue: 11 )