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Temperature dependence of apparent threshold voltage of silicon MOS transistors at cryogenic temperatures

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5 Author(s)
Nathanson, H.C. ; Westinghouse Research Laboratories, Pittsburgh, Pa. ; Jund, C. ; Grosvalet, J. ; Jund, C.
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Measurements of apparent threshold voltages for conduction of bothn-p-nandp-n-pMOS-

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Electron Devices, IEEE Transactions on  (Volume:15 ,  Issue: 6 )