By Topic

A microwave Schottky-barrier varistor using gallium arsenide for low series resistance

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)

Microwave communications systems require varistors for downconversion, limiting and detection. This paper describes the development of a device being manufactured for these uses in the common carrier bands at 4, 6, and 11 GHz. The barrier-forming metals are titanium and silver on n-type epitaxial gallium arsenide. Means of characterization and control of the required doping profile in the 0.5 µm-thick epitaxy will be discussed. Plated gold contacts overlaying deposited silicon dioxide are used with a miniature cartridge encapsulation.

Published in:

Electron Devices Meeting, 1967 International  (Volume:13 )

Date of Conference: