Vapor deposited SiO2has been evaluated as the dielectric in the multilevel interconnection of bipolar arrays containing about 1000 crossovers, 150 vias, and 750 components. The packaging density of these arrays is 100,000 components/in2. The vapor plating method has been shown to be compatible with silicon monolithic circuit fabrication and results in the deposition of conformal SiO2films of low pinhole density. The vapor plating system and the characteristics of SiO2deposited under several conditions are discussed. The techniques used to characterize the films are described and those for fabricating arrays are discussed.