By Topic

MOS-LSI devices and systems

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)

The exploitation of some of the unique properties of the MOS transistor has generated new circuit forms that have certainly made an impact in advancing the art of large scale integration. Two years ago this was demonstrated through the introduction of high density MOS shift registers. These shift registers employed MOS gate charge storage for temporary memory, active MOS load resistors that could be turned on and off with clock pulses, topological scaling of geometries to achieve predictable 1 and 0 levels and the use of the bilateral properties of the MOS devices as a coupling element. These circuits were capable of 1 megacycle operation at approximately 3 milliwatts per bit.

Published in:

Electron Devices Meeting, 1967 International  (Volume:13 )

Date of Conference: