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The exploitation of some of the unique properties of the MOS transistor has generated new circuit forms that have certainly made an impact in advancing the art of large scale integration. Two years ago this was demonstrated through the introduction of high density MOS shift registers. These shift registers employed MOS gate charge storage for temporary memory, active MOS load resistors that could be turned on and off with clock pulses, topological scaling of geometries to achieve predictable 1 and 0 levels and the use of the bilateral properties of the MOS devices as a coupling element. These circuits were capable of 1 megacycle operation at approximately 3 milliwatts per bit.