Scheduled System Maintenance on May 29th, 2015:
IEEE Xplore will be upgraded between 11:00 AM and 10:00 PM EDT. During this time there may be intermittent impact on performance. We apologize for any inconvenience.
By Topic

Linear microwave amplification with Gunn oscillators

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Thim, H.W. ; Bell Telephone Laboratories, Inc., Murray Hill, N. J.

Linear microwave amplifiers with continuous power outputs of 100 mW have been constructed utilizing the frequency-independent negative conductance observed externally in Gunn oscillators. This negative conductance is exhibited only in samples containing propagating dipole layers, in other words, n_{0} . L must be larger than 1012cm-2for n-GaAs. The output power obtainable from this amplifier is substantially larger than that from a subcritically doped GaAs amplifier ( n_{0} . L < 10^{12} cm-2) because n_{0} . L can be increased. Power output and efficiency are discussed in terms of n0and L . The upper-frequency limit for amplification is determined by the time the domain takes to readjust itself after a change of external voltage which leads to an upper limit for the f. L product (about 108cm/s). The essential feature of the amplifier circuit is to provide both a short circuit at the Gunn oscillation frequency and a broadband circuit at the signal frequency. An average gain of 3 dB was exhibited from 5.5 GHz to 6.5 GHz. Gain compression of 1 dB occurred at 60 mW output power with 9 dB gain, while the noise figure was about 19 dB.

Published in:

Electron Devices, IEEE Transactions on  (Volume:14 ,  Issue: 9 )