By Topic

High barrier height Schottky diodes on n-InP by low temperature deposition

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Shi, Z.Q. ; Dept. of Electr. & Comput. Eng., State Univ. of New York at Buffalo, Amherst, NY, USA ; Wallace, R.L. ; Anderson, W.A.

The formation of ultra-high barrier height (φB=0.96 eV) Schottky contacts to n-InP, without an intentionally grown interfacial oxide, using metal deposition on a substrate cooled to as low as 77 K is discussed. Values of φB=0.46-0.52 eV for diodes deposited at room temperature (RT=300 K) agree and give an ideality factor near unity. For diodes deposited at a low temperature (LT) of 77 K, the leakage current density (J0) is reduced by more than 6-7 orders of magnitude with respect to the RT diodes. The φB for the LT diodes is increased from 0.48 to 0.96 eV for Pd metal and from 0.51 to 0.85 eV for Au metal, respectively. The conduction mechanisms for the LT and RT diodes are found to be controlled by thermionic-field emission (TFE) and thermionic emission (TE), respectively. It is shown that an alteration of the metal-induced interface states, inhibition of surface segregation of the released In and P atoms, and very uniform metal coverage may be responsible for the distinct differences between the RT and LT diodes

Published in:

Indium Phosphide and Related Materials, 1991., Third International Conference.

Date of Conference:

8-11 Apr 1991