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Analysis of high-frequency thermal noise of enhancement mode MOS field-effect transistors

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1 Author(s)
Shoji, M. ; Bell Telephone Laboratories, Inc., Murry Hill, N. J.

The high-frequency thermal noise in the drain and the gate of an enhancement mode MOS field-effect transistor was analyzed by using the transmission line model of the channel. The analysis gave the mean squared noise current generators of the drain and the gate and their correlation. The correlation coefficient of the drain and the gate noise was zero for zero drain voltage and was 0.395j at saturation. The noise figure of the MOS field-effect transistor was calculated from the result of the analysis. The high-frequency noise characteristics of an MOS field-effect transistor were similar to those of a junction gate field-effect transistor.

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Electron Devices, IEEE Transactions on  (Volume:ED-13 ,  Issue: 6 )