Notification:
We are currently experiencing intermittent issues impacting performance. We apologize for the inconvenience.
By Topic

Reverse biased PIN diode equivalent circuit parameters at microwave frequencies

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Senhouse, L.S., Jr. ; Bell Telephone Laboratories, Inc., Murray Hill, N. J.

This paper attempts to fulfill the need for a quantitative analysis of the microwave equivalent steady state circuit parameters of the reverse biased PIN diode as a function of the process variables of the unit. The process variables considered include the effects of small impurity concentrations in the I region and variations in diffusion depth, surface dopant concentration, and I region width at the microwave frequency of 1 Gc/s. Using the Q of the diode as a result of a given design, it is shown that a high Q depends on having a small width, high resistivity I region, along with a shallow diffusion depth. The equivalent circuit parameters are independent of surface dopant concentration to a first approximation.

Published in:

Electron Devices, IEEE Transactions on  (Volume:ED-13 ,  Issue: 3 )