By Topic

Transient performance of four-terminal field-effect transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Hudson, P.H. ; U. S. Army Electronics Lab., Fort Monmouth, N. J. ; Lindholm, F.A ; Hamilton, D.J.

This paper extends previous work on the low-frequency operation of four-terminal field-effect transistors (FTFET's) by developing a model for the transient as well as the low-frequency performance of a symmetrical device, operating in the region beyond pinch-off. The model, which represents the FTFET in any of its possible modes of operation, is derived systematically from consideration of the physical makeup of the device. As a consequence, the element values are determined as explicit functions of the physical makeup and the bias voltages at the two gates; alternatively, they can be determined from a set of terminal measurements. In addition, in conjunction with the development of the model, expressions are derived for the functional dependence on gate biases of the gate-source capacitances present in any of the various modes of operation. Experimental results for the step-function response of the device are in good agreement with theory for broad ranges of source and load terminations. Good correlation has also been obtained for the functional dependence of the gate-source capacitances.

Published in:

Electron Devices, IEEE Transactions on  (Volume:12 ,  Issue: 7 )