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Optical characterization of strained III-V compound semiconductor epilayers

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3 Author(s)
Koteles, E.S. ; GTE Lab. Inc., Waltham, MA, USA ; Kenneson, D. ; Abdalla, M.

A technique using photoluminescence spectroscopy (PL) to optically characterize the strain present in a lattice mismatched III-V compound semiconductor bulk epilayer is described. The 15-K PL spectra of a series of InxGa1-xAs epilayers with indium compositions at or slightly above that needed to satisfy the lattice matching condition are presented. At the exact lattice matching condition, a single, narrow, strong PL peak is observed. As the indium composition is increased further, the lattice constant increases, and the epilayer experiences biaxial compressive strain. A doublet structure evolves in the PL spectrum, and only a weak, single, broad, PL peak is observed when the whole epilayer has relaxed. The analysis is non-destructive, rapid, and applicable to any epilayer in which strain may be present

Published in:

Indium Phosphide and Related Materials, 1991., Third International Conference.

Date of Conference:

8-11 Apr 1991

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