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Very low threshold current density (Al)GaInAs/Al(Ga)InAs laser structures grown by atmospheric pressure MOVPE

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3 Author(s)
R. Gessner ; Siemens Res. Labs., Munich, Germany ; M. Beschorner ; M. Druminski

The growth of (Al)GaInAs/Al(Ga)InAs structures of high quality for laser devices using metalorganic vapor-phase epitaxy (MOVPE) at atmospheric pressure is described. SeH2 and DEZn have been used as the dopant precursors. Se is an appropriate dopant for the n-type confinement layers of lasers, showing a distinctly higher electrical activation in AlInAs than Si. Zn is superior to Mg as a dopant for the p-type confinement layers of lasers as its apparent diffusion coefficient is about one order of magnitude lower than that of Mg in AlInAs. Broad-area double-heterostructure (DH) lasers (device length=800 μm) operating at 1.66 μm and 1.55 μm are shown to have Ith values as low as 2.3 kA cm2 and 1.5 kA/cm2, respectively. With broad-area separate-confinement-heterostructure multiple-quantum-well (SCH-MQW) lasers (device length=800 μm) emitting at 1.524 μm, threshold current densities as low is 0.92 kA/cm2 can be achieved

Published in:

Indium Phosphide and Related Materials, 1991., Third International Conference.

Date of Conference:

8-11 Apr 1991