By Topic

Hot-glass sealed silicon diodes

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)

A hard-glass kovar encapsulation technique for hermetically sealing diffused silicon mesa diodes is described. The seal-in operation is a hot-seal technique, since the glass parts of the package reach temperatures from 800°C to 1000°C during the final sealing operation, and the silicon wafer is exposed to high temperatures during closure of the package. Experiments with this structure indicate that this hot-seal process leads to a relatively clean, dry environment and a stable semiconductor surface. Electrical characteristics of silicon wafers are preserved or improved by hot seal-in, and the encapsulated diodes exhibit a high degree of electrical stability.

Published in:

Electron Devices Meeting, 1961 Internationa  (Volume:7 )

Date of Conference: