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Annealing and bulk crystal growth of undoped InP under controlled P-pressure: a perspective for the preparation of undoped SI InP?

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5 Author(s)
Hirt, G. ; Inst. fur Werkstoffwissenschaften, Erlangen-Nurnberg Univ., Germany ; Hofmann, D. ; Mosel, F. ; Schafer, N.
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Nominally undoped semi-insulating InP is prepared reproducibly. The electrical properties of a large series of undoped InP samples, before and after annealing under controlled phosphorus pressure, are presented. Spectroscopic investigations show that iron is incorporated during annealing, but native defects have to be taken into consideration in order to explain the electrical data. Based on a survey of intrinsic defects in InP and on PL measurements of crystals with different stoichiometries, a perspective is given for the growth of undoped semi-insulating InP under controlled phosphorus pressure

Published in:

Indium Phosphide and Related Materials, 1991., Third International Conference.

Date of Conference:

8-11 Apr 1991

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