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Improvement of GaN-based light-emitting diode by indium-tin-oxide transparent electrode and vertical electrode

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1 Author(s)
Seong-Jin Kim ; Photonic Devices Res. Lab., Itswell Co., Chungbuk, South Korea

A sapphire-etched vertical-electrode nitride semiconductor (SEVENS) light-emitting diode (LED) is fabricated by means of a selective chemical wet-etching technique. The SEVENS-LED formed on sapphire substrate exhibits excellent device performance compared to a conventional NiAu lateral-electrode (LE) GaN-based LED formed on the same sapphire substrate. The integral light-output power of SEVENS-LED is ∼7 mW, which is 1.75 times stronger than that of the conventional NiAu LE-LED (∼4 mW). The external quantum efficiency of SEVENS-LED is estimated to be approximately 13%.

Published in:

Photonics Technology Letters, IEEE  (Volume:17 ,  Issue: 8 )

Date of Publication:

Aug. 2005

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