Cart (Loading....) | Create Account
Close category search window

Improvement of GaN-based light-emitting diode by indium-tin-oxide transparent electrode and vertical electrode

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Seong-Jin Kim ; Photonic Devices Res. Lab., Itswell Co., Chungbuk, South Korea

A sapphire-etched vertical-electrode nitride semiconductor (SEVENS) light-emitting diode (LED) is fabricated by means of a selective chemical wet-etching technique. The SEVENS-LED formed on sapphire substrate exhibits excellent device performance compared to a conventional NiAu lateral-electrode (LE) GaN-based LED formed on the same sapphire substrate. The integral light-output power of SEVENS-LED is ∼7 mW, which is 1.75 times stronger than that of the conventional NiAu LE-LED (∼4 mW). The external quantum efficiency of SEVENS-LED is estimated to be approximately 13%.

Published in:

Photonics Technology Letters, IEEE  (Volume:17 ,  Issue: 8 )

Date of Publication:

Aug. 2005

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.