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Engineering laser gain spectrum using electronic vertically coupled InAs-GaAs quantum dots

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10 Author(s)
Jyh-Shyang Wang ; Dept. of Phys., Chung Yuan Christian Univ., Chung-Li City, Taiwan ; Ru-Shang Hsiao ; Jenn-Fang Chen ; Chu-Shou Yang
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Continuous large-broad laser gain spectra near 1.3 μm are obtained using an active region of electronic vertically coupled (EVC) InAs-GaAs quantum dots (QDs). A wide continuous electroluminescence spectrum, unlike that from conventional uncoupled InAs QD lasers, was obtained around 230 nm (below threshold) with a narrow lasing spectrum. An internal differential quantum efficiency as high as 90%, a maximum measured external differential efficiency of 73% for a stripe-length of L=1 mm, and a threshold current density for zero total optical loss as low as 7 A/cm2 per QD layer were achieved.

Published in:

IEEE Photonics Technology Letters  (Volume:17 ,  Issue: 8 )