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Extremely low-phase noise X-band field effect transistor dielectric resonator oscillator

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2 Author(s)
Mizan, M. ; US Army LABCOM, Fort Monmouth, NJ, USA ; McGowan, R.C.

A 9 GHz FET DRO (dielectric resonator oscillator) is reported which exhibits state-of-the-art oscillator performance in several ways. The merit of the oscillator was determined by measuring the loaded quality factor, single sideband phase noise, and frequency stability of the device. Additionally, the residual phase noise of the dielectric resonator and the FET amplifier was measured to determine the limiting element in the oscillator. The 9 GHz FET DRO displays a single sideband phase noise which is 3 dBc/Hz better than the previous state-of-the-art, as well as a frequency stability of 0.65 ppm/K.<>

Published in:

Microwave Symposium Digest, 1991., IEEE MTT-S International

Date of Conference:

10-14 July 1991