By Topic

Low noise microwave oscillator using ultra high Q dielectric resonator

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
K. Uzawa ; Sumitomo Metal Min. Co. Ltd., Chiba, Japan ; K. Matsumoto

A dielectric resonator oscillator (DRO) with excellent low single sideband (SSB) noise was developed at 16 GHz. BMT (Ba(Mg/sub 1/3/Ta/sub 2/3/)O/sub 3/) ceramic with low dielectric loss (tan delta = 3.3*10/sup -5/ at 10 GHz) was used as the dielectric resonator. A conventional GaAs MESFET was used as an active component. SSB noise at 10 kHz from the carrier of -102 dBc/Hz was obtained. This result implies that the low-loss BMT ceramic as a high-Q dielectric resonator contributes to the low-noise performance of the oscillators.<>

Published in:

Microwave Symposium Digest, 1991., IEEE MTT-S International

Date of Conference:

10-14 July 1991