Referenced Items are not available for this document.
A dielectric resonator oscillator (DRO) with excellent low single sideband (SSB) noise was developed at 16 GHz. BMT (Ba(Mg/sub 1/3/Ta/sub 2/3/)O/sub 3/) ceramic with low dielectric loss (tan delta = 3.3*10/sup -5/ at 10 GHz) was used as the dielectric resonator. A conventional GaAs MESFET was used as an active component. SSB noise at 10 kHz from the carrier of -102 dBc/Hz was obtained. This result implies that the low-loss BMT ceramic as a high-Q dielectric resonator contributes to the low-noise performance of the oscillators.<
Published in:
Microwave Symposium Digest, 1991., IEEE MTT-S International
Date of Conference: 10-14 July 1991
- Page(s):
- 835 - 838 vol.2
- Meeting Date :
- 10 Jun 1991-14 Jun 1991
- ISSN :
- 0149-645X
- Print ISBN:
- 0-87942-591-1
- INSPEC Accession Number:
- 4086544
- Conference Location :
- Boston, MA, USA
- Digital Object Identifier :
- 10.1109/MWSYM.1991.147136
- Product Type:
- Conference Publications
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