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Low noise microwave oscillator using ultra high Q dielectric resonator

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2 Author(s)
Uzawa, K. ; Sumitomo Metal Min. Co. Ltd., Chiba, Japan ; Matsumoto, K.

A dielectric resonator oscillator (DRO) with excellent low single sideband (SSB) noise was developed at 16 GHz. BMT (Ba(Mg/sub 1/3/Ta/sub 2/3/)O/sub 3/) ceramic with low dielectric loss (tan delta = 3.3*10/sup -5/ at 10 GHz) was used as the dielectric resonator. A conventional GaAs MESFET was used as an active component. SSB noise at 10 kHz from the carrier of -102 dBc/Hz was obtained. This result implies that the low-loss BMT ceramic as a high-Q dielectric resonator contributes to the low-noise performance of the oscillators.<>

Published in:

Microwave Symposium Digest, 1991., IEEE MTT-S International

Date of Conference:

10-14 July 1991