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A CMOS current mirroring integration readout structure for infrared focal plane arrays

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2 Author(s)
Kulah, H. ; Middle East Technical University, Ankara, Turkey ; Akin, T.

This paper reports a new, high performance CMOS readout structure, called Current Mirroring Integration (CMI), for high-resolution infrared Focal Plane Array (FPA) applications. Using the integration capacitance outside the FPA, the unit cell area is decreased, making the circuit suitable for high-resolution applications. Moreover, the readout circuit offers high injection efficiency, perfect (almost-zero) detector bias, and large dynamic range in a small pixel area. The circuit provides a maximum charge storage capacity of 5.25×107electrons and a maximum transimpedance of 6×107Ω for a 2pF integration capacitance and 5V power supply. The unit-cell employs only nine MOS transistors and occupies an area of 20µm × 25µm in a 0.8µm CMOS process.

Published in:

Solid-State Circuits Conference, 1998. ESSCIRC '98. Proceedings of the 24th European

Date of Conference:

22-24 Sept. 1998