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Multigigahertz monolithic GaAs optoelectronic receivers using 0.2 mu m gate-length MESFETs

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9 Author(s)
Walden, R.H. ; Hughes Res. Lab., Malibu, CA, USA ; Hooper, W.W. ; Chou, C.S. ; Ngo, C.
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Two GaAs optical receiver front-ends are reported. Each consists of an MSM photodetector and a transresistance amplifier that drives a 50 Omega load. One amplifier has a measured analog bandwidth of 6.5 GHz, while the other has one of 4.5 GHz. The transresistance-bandwidth product for both is 2.1 THz- Omega .<>

Published in:

Microwave Symposium Digest, 1991., IEEE MTT-S International

Date of Conference:

10-14 July 1991