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High performance MMIC 20 GHz LNA and 44 GHz power amplifier using planar-doped InGaAs HEMTs

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3 Author(s)
Lester, J.A. ; TRW Electron. Syst. Group, Redondo Beach, CA, USA ; Jones, W.L. ; Chow, P.D.

GaAs-based InGaAs pseudomorphic high electron mobility transistors (HEMTs) have demonstrated superior low-noise and high-power capabilities at microwave and millimeter-wave frequencies. The authors present a pair of 3-stage amplifiers fabricated with the same process demonstrating excellent noise and power performance. A K-band fully monolithic LNA (low-noise amplifier) has been demonstrated greater than 33 dB gain over a 4 GHz bandwidth with a noise figure of less than 2 dB over 2 GHz. A Q-band power amplifier has demonstrated an output power of 13.3 dBm at 1 dB compression with 25.3 dB of gain and a saturated output power of 16.1 dBm at 40 GHz. These amplifiers are designed for insertion into future EHF satellite communication ground terminals.<>

Published in:

Microwave Symposium Digest, 1991., IEEE MTT-S International

Date of Conference:

10-14 July 1991