A HEMT harmonic oscillator stabilized by an X-band dielectric resonator

A simple design method for harmonic oscillators using HEMT (high-electron-mobility-transistor) devices is presented. The method employs nonlinear analysis to derive the harmonic components of the drain current of a low-frequency transistor model. The resulting harmonic components are used to linearize a high-frequency model and to synthesize the microwave circuit. A second-harmonic oscillator that uses an X-band dielectric resonator and a packaged HEMT device has +6.0 dBm output power at 18 GHz with 6.5% RF/DC efficiency.<
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