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A HEMT harmonic oscillator stabilized by an X-band dielectric resonator

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3 Author(s)
R. Tupynamba ; Sul America Teleinformatica SA, Sao Paulo, Brazil ; E. Camargo ; F. S. Correra

A simple design method for harmonic oscillators using HEMT (high-electron-mobility-transistor) devices is presented. The method employs nonlinear analysis to derive the harmonic components of the drain current of a low-frequency transistor model. The resulting harmonic components are used to linearize a high-frequency model and to synthesize the microwave circuit. A second-harmonic oscillator that uses an X-band dielectric resonator and a packaged HEMT device has +6.0 dBm output power at 18 GHz with 6.5% RF/DC efficiency.<>

Published in:

Microwave Symposium Digest, 1991., IEEE MTT-S International

Date of Conference:

10-14 July 1991