By Topic

GaAs HBT wideband and low power consumption amplifiers to 24 GHz

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)

The authors report on the design and performance of a 2-24-GHz distributed matrix amplifier and a 1-20-GHz two-stage Darlington coupled amplifier based on an advanced HBT (heterojunction bipolar transistor) MBE (molecular beam epitaxy) profile which increases the bandwidth response of the distributed and Darlington amplifiers by providing lower base-emitter and collector-base capacitances. The matrix amplifier has a 9.5-dB nominal gain and a 3-dB bandwidth to 24 GHz. The input and output VSWRs (voltage standing wave ratios) are less than 1.5:1 and 2.0:1, respectively. The total power consumed is less than 60 mW. The two-stage Darlington amplifier has 7-dB gain and 3-dB bandwidth to 20 GHz. The input and output VSWRs are less than 1.5:1 and 2.3:1, respectively. This amplifier consumes 380 mW of power and has a chip size of 1.66*1.05 mm/sup 2/.<>

Published in:

Microwave Symposium Digest, 1991., IEEE MTT-S International

Date of Conference:

10-14 July 1991