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Low power programmable-gain CMOS distributed LNA for ultra-wideband applications

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2 Author(s)
Zhang, F. ; Columbia Integrated Syst. Lab, Columbia Univ., New York, NY, USA ; Kinget, P.

A design methodology is presented for low power distributed amplifiers and is used for the design of a 9 mW LNA with programmable gain implemented in a 0.18 μm CMOS process. The LNA provides a gain of 8 ± 0.6 dB from DC to 6.2 GHz, with an input match of -16 dB and an output match of -10 dB over the entire band. The IIP3 is +1.8 dBm, and the NF ranges from 4.2 to 6.2 dB. The gain is tunable from -10 dB to +8 dB while gain flatness and matching are maintained.

Published in:

VLSI Circuits, 2005. Digest of Technical Papers. 2005 Symposium on

Date of Conference:

16-18 June 2005