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The tunneling field effect transistor (TFET) is a quantum-mechanical device which is able to extend the epoch of the standard CMOS process by offering reduced short channel effects and smaller leakage currents. First, the mode of operation of the TFET is presented. Next, the application as photo pixel cell is proposed comprising only one device. A pin diode as light sensor is combined in a single device with a MOS-gate to select a single cell out of a column of a cell array. Additionally, the IT photo pixel can be tuned with respect to sensitivity range and signal amplitude by the biasing parameters.