By Topic

The 1T photo pixel cell using the tunneling field effect transistor (TFET)

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Nirschl, T. ; Inst. for Tech. Electron., Munich Tech. Univ., Germany ; Bargagli-Stoffi, A. ; Fischer, J. ; Henzler, S.
more authors

The tunneling field effect transistor (TFET) is a quantum-mechanical device which is able to extend the epoch of the standard CMOS process by offering reduced short channel effects and smaller leakage currents. First, the mode of operation of the TFET is presented. Next, the application as photo pixel cell is proposed comprising only one device. A pin diode as light sensor is combined in a single device with a MOS-gate to select a single cell out of a column of a cell array. Additionally, the IT photo pixel can be tuned with respect to sensitivity range and signal amplitude by the biasing parameters.

Published in:

VLSI Circuits, 2005. Digest of Technical Papers. 2005 Symposium on

Date of Conference:

16-18 June 2005