By Topic

Reliability of HfSiON as gate dielectric for advanced CMOS technology

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

13 Author(s)
Wang, H.C.-H. ; Taiwan Semicond. Manuf. Co., Hsinchu, Taiwan ; Ching-Wei Tsai ; Shang-Jr Chen ; Chien-Tai Chan
more authors

Optimizing nitrogen incorporation in HfSiON gate dielectric can improve overall reliability, e.g. nMOS PBTI lifetime, hot carrier (HC) lifetime, time-to-breakdown (tBD), without adverse effects on pMOS NBT1 lifetime and electron/hole mobility. The improvement is attributed to excellent thermal stability against partial-crystallization after 1100°C annealing, and the concomitantly reduced trap generation minimizes stress induced leakage current (SILC) and flicker noise degradation after PBTI stress. A new methodology is proposed, for the first time, to correctly predict HC lifetime of HfSiON nMOS based on electron trapping.

Published in:

VLSI Technology, 2005. Digest of Technical Papers. 2005 Symposium on

Date of Conference:

14-16 June 2005