Referenced Items are not available for this document.
Optimizing nitrogen incorporation in HfSiON gate dielectric can improve overall reliability, e.g. nMOS PBTI lifetime, hot carrier (HC) lifetime, time-to-breakdown (tBD), without adverse effects on pMOS NBT1 lifetime and electron/hole mobility. The improvement is attributed to excellent thermal stability against partial-crystallization after 1100°C annealing, and the concomitantly reduced trap generation minimizes stress induced leakage current (SILC) and flicker noise degradation after PBTI stress. A new methodology is proposed, for the first time, to correctly predict HC lifetime of HfSiON nMOS based on electron trapping.
Published in:
VLSI Technology, 2005. Digest of Technical Papers. 2005 Symposium on
Date of Conference: 14-16 June 2005
- Page(s):
- 170 - 171
- Print ISBN:
- 4-900784-00-1
- INSPEC Accession Number:
- 8615705
- Digital Object Identifier :
- 10.1109/.2005.1469255
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