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High-performance 50-nm-gate-length Schottky-source/drain MOSFETs with dopant-segregation junctions

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4 Author(s)
Kinoshita, A. ; Center of Corporate R&D, Toshiba Corp., Yokohama, Japan ; Tanaka, C. ; Uchida, K. ; Koga, J.

High-performance operation was achieved in a novel Schottky-source/drain MOSFET (SBT: Schottky barrier transistor), which has dopant-segregation (DS) Schottky source/drain. Sub-100 nm complementary DS-SBTs were fabricated using the CoSi2 process, which was fully compatible with the current CMOS technology. Excellent CMOS performance was obtained without any channel-mobility degradation, and CMOS ring oscillator was successfully demonstrated. In addition, >20 % improvement in drive current over the conventional n-MOSFETs was confirmed in the n-type DS-SBTs around the gate length of 50 nm.

Published in:

VLSI Technology, 2005. Digest of Technical Papers. 2005 Symposium on

Date of Conference:

14-16 June 2005

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