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Dopant profile engineering of CMOS devices formed by non-melt laser spike annealing

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6 Author(s)
Shima, A. ; Micro Device Div., Hitachi Ltd., Tokyo, Japan ; Yun Wang ; Deepak Upadhyaya ; Lucia Feng
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We optimized the halo profile and deep source/drain junction profile of the devices that were fabricated by non-melt laser spike annealing (LSA). The optimized devices achieved 10%- and 20%-better performance compared to those by the conventional LSA and rapid thermal annealing (RTA), respectively. The hot carrier degradation was also reduced to an RTA-comparable level by the halo optimization. From these results we concluded that the dopant profile engineering specific to LSA is a key to obtaining good device performance and that the devices by the optimized LSA process are the most promising for hp65-node and beyond.

Published in:

VLSI Technology, 2005. Digest of Technical Papers. 2005 Symposium on

Date of Conference:

14-16 June 2005