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We optimized the halo profile and deep source/drain junction profile of the devices that were fabricated by non-melt laser spike annealing (LSA). The optimized devices achieved 10%- and 20%-better performance compared to those by the conventional LSA and rapid thermal annealing (RTA), respectively. The hot carrier degradation was also reduced to an RTA-comparable level by the halo optimization. From these results we concluded that the dopant profile engineering specific to LSA is a key to obtaining good device performance and that the devices by the optimized LSA process are the most promising for hp65-node and beyond.