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0.248μm2 and 0.334μm2 conventional bulk 6T-SRAM bit-cells for 45nm node low cost - general purpose applications

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33 Author(s)
Boeuf, F. ; STMicroelectron., Crolles, France ; Arnaud, F. ; Boccaccio, C. ; Salvetti, F.
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This work highlights the realization and 0.248μm2 to 0.334μm2 SRAM bit-cells with conventional bulk technology based on 19Å CET SiON gate oxide, poly-silicon gate electrode, and mobility enhancement techniques for both nMOS and pMOS. High density critical lithography levels have been exposed with e-beam direct writing thus contributing to the overall cost-effectiveness of the technology.

Published in:

VLSI Technology, 2005. Digest of Technical Papers. 2005 Symposium on

Date of Conference:

14-16 June 2005