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A novel NAND-type PHINES nitride trapping storage flash memory cell with physically 2-bits-per-cell storage, and a high programming throughput for mass storage applications

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16 Author(s)
Yeh, C.C. ; Technol. Dev. Center, Macronix Int. Co.,Lt, Hsin-Chu, Taiwan ; Tahui Wang ; Liao, Y.Y. ; Tsai, W.J.
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A novel NAND-type PHINES nitride trapping storage flash memory cell is proposed for the first time. PHINES memory cells use a SONOS cell structure, and are arranged in a modified NAND array. FN electron injection and band-to-band (BTB) hot-hole (HH) injection are utilized as the erase and the program operations, respectively. Read is performed by a novel BTB current sensing scheme. Physically 2-bits-per-cell storage, low power operation, and a high programming throughput are demonstrated.

Published in:

VLSI Technology, 2005. Digest of Technical Papers. 2005 Symposium on

Date of Conference:

14-16 June 2005