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For the first time, we show the experimental inversion mobility data on ultra thin  SOI substrates for thickness as thin as 6nm. Both electron and hole mobility in ultra thin  SOI are evaluated as a function of SOI thickness. In addition, novel processes such as  selective epitaxy and extremely thin cobalt disilicide CoSi2 are developed. Ring oscillators and SRAM cell are demonstrated for the first time on 6nm  ultra thin SOI. When compared to ultra thin SOI in (100) substrate, we observe ∼33% drive current enhancement in PFETs at Lg=50nm and ∼1.8X hole mobility enhancement.