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Strained-silicon MOSFETs of low leakage current and high breakdown voltage for analog applications

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10 Author(s)
Sugii, N. ; Central Res. Lab., Hitachi, Ltd., Tokyo, Japan ; Kondo, M. ; Miyamoto, M. ; Hoshino, Y.
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Strained-silicon MOSFETs of both high breakdown voltage and low leakage current were fabricated by employing a thick strained-silicon layer. It is demonstrated that proper control of junction depth can drastically reduce leakage current although misfit dislocations exist at the strained-silicon/SiGe interface, and that breakdown voltage of strained-silicon MOSFETs kept the same high value as silicon MOSFETs even at elevated temperatures. RF performances such as fT, noise, and FR-power-amplifier efficiency were improved by this technology.

Published in:

VLSI Technology, 2005. Digest of Technical Papers. 2005 Symposium on

Date of Conference:

14-16 June 2005