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Strained-silicon MOSFETs of both high breakdown voltage and low leakage current were fabricated by employing a thick strained-silicon layer. It is demonstrated that proper control of junction depth can drastically reduce leakage current although misfit dislocations exist at the strained-silicon/SiGe interface, and that breakdown voltage of strained-silicon MOSFETs kept the same high value as silicon MOSFETs even at elevated temperatures. RF performances such as fT, noise, and FR-power-amplifier efficiency were improved by this technology.
Date of Conference: 14-16 June 2005