Cart (Loading....) | Create Account
Close category search window
 

Modeling of substrate noise coupling for nMOS transistors in heavily doped substrates

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)

An n-contact to p-contact model is proposed for analyzing substrate noise coupling in mixed-signal integrated circuits. The model takes advantage of an existing p-contact to p-contact model and combines it with a new concept of virtual separation. The virtual separation concept has been validated with three-dimensional device simulations and measurements from test structures fabricated in a 0.35 μm CMOS heavily doped process. This model is useful when transistor switching noise is the dominant source of substrate noise coupling.

Published in:

Electron Devices, IEEE Transactions on  (Volume:52 ,  Issue: 8 )

Date of Publication:

Aug. 2005

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.